PART |
Description |
Maker |
1N4981D 1N4973C 1N4955D 1N4957D 1N4957C 1N4964D 1N |
Diode Zener Single 91V 1% 5W 2-Pin Case E Diode Zener Single 43V 2% 5W 2-Pin Case E Diode Zener Single 7.5V 1% 5W 2-Pin Case E Diode Zener Single 9.1V 1% 5W 2-Pin Case E Diode Zener Single 9.1V 2% 5W 2-Pin Case E Diode Zener Single 18V 1% 5W 2-Pin Case E Diode Zener Single 10V 2% 5W 2-Pin Case E Diode Zener Single 12V 1% 5W 2-Pin Case E Diode Zener Single 51V 1% 5W 2-Pin Case E Diode Zener Single 36V 2% 5W 2-Pin Case E Diode Zener Single 15V 1% 5W 2-Pin Case E Diode Zener Single 20V 1% 5W 2-Pin Case E Diode Zener Single 75V 1% 5W 2-Pin Case E Diode Zener Single 100V 2% 5W 2-Pin Case E Diode Zener Single 100V 1% 5W 2-Pin Case E Diode Zener Single 11V 1% 5W 2-Pin Case E Diode Zener Single 75V 2% 5W 2-Pin Case E Diode Zener Single 56V 1% 5W 2-Pin Case E Diode Zener Single 24V 1% 5W 2-Pin Case E Diode Zener Single 24V 2% 5W 2-Pin Case E Diode Zener Single 10V 1% 5W 2-Pin Case E Diode Zener Single 13V 2% 5W 2-Pin Case E Diode Zener Single 30V 1% 5W 2-Pin Case E Diode Zener Single 39V 1% 5W 2-Pin Case E
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New Jersey Semiconductor
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TEC1-12715 |
Max Operating Tem
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HB Electronic Component...
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WS57C49C-1 WS57C49C-35 WS57C49C-35CMB WS57C49C-35D |
8K X 8 UVPROM, 55 ns, CQCC28 CURRENT LIMITR INRSH 5.0 OHM 20% 高K的军事8的CMOS胎膜早破/ RPROM MILITARY HIGH SPEED 8K x 8 CMOS PROM/RPROM 高K的军事8的CMOS胎膜早破/ RPROM THERMISTOR, NTC; Series:B572; Thermistor type:NTC; Resistance:7R; Tolerance, resistance: /-20%; Beta value:3060; Temperature, lower limit, beta value:25(degree C); Temperature, upper limit, beta value:100(degree C); Temp, op. RoHS Compliant: Yes THERMISTOR, NTC; Series:B572; Thermistor type:NTC; Resistance:33R; Tolerance, resistance:20%; Beta value:3300; Temperature, lower limit, beta value:25(degree C); Temperature, upper limit, beta value:100(degree C); Case RoHS Compliant: Yes
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STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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UN222X UNR2222 UNR2223 UNR2224 UNR2221 |
Silicon NPN epitaxial planar type Flash Memory IC; Leaded Process Compatible:Yes; Memory Configuration:128K x 8; Memory Size:1Mbit; Package/Case:32-PLCC; Supply Voltage Max:5.5V Flash Memory IC; Access Time, Tacc:120ns; Package/Case:32-TSOP; Memory Configuration:128K x 8; Memory Size:1Mbit; Supply Voltage Max:5.5V; Mounting Flash Memory IC; Access Time, Tacc:45ns; Package/Case:32-TSOP; Memory Configuration:128K x 8; Memory Size:1Mbit; Supply Voltage Max:5.5V; Mounting POT THUMBWHEEL 10K OHM LINEAR
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Panasonic Semiconductor Panasonic Corporation
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UN1210 UN1211 UN1212 UN1213 UN1214 UN1215 UN1216 U |
C; Package/Case:16-SO; Supply Voltage Max:3.6V; Page/Burst Read Access:1.4ms Flash Memory IC; Access Time, Tacc:110ns; Package/Case:64-BGA; Supply Voltage:3V; Memory Size:64Mbit Silicon NPN epitaxial planer transistor
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Panasonic Corporation PANASONIC[Panasonic Semiconductor]
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UM612 UM614 UM617 UM604 UM628 UM605 UM611 UM622 UM |
15 Watt DC-DC Converters Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:100ns; Page/Burst Read Access:25ns; Sector Type:Top Boot Block; Package/Case:56-TSOP; Memory Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:100ns; Page/Burst Read Access:25ns; Sector Type:Bottom Boot Block; Package/Case:56-TSOP; Memory Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:110ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:110ns; Page/Burst Read Access:25ns; Sector Type:Top Boot Block; Package/Case:56-TSOP; Memory Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:110ns; Page/Burst Read Access:25ns; Sector Type:Bottom Boot Block; Package/Case:56-TSOP; Memory Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Bottom Boot Block; Package/Case:64-BGA; Memory Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory
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List of Unclassifed Man... List of Unclassifed Manufacturers N.A. Unisonic Technologies ETC[ETC] Electronic Theatre Controls, Inc.
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AS431 AS431A2DBVT AS431C2DBVT AS431C2DBV13 |
1-OUTPUT TWO TERM VOLTAGE REFERENCE, 2.49 V, PDSO5 Precision Tem-perature Compensated Reference IC
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ASTEC Semiconductor
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AM29F400BT-120ED AM29F400BT-55ED AM29F400BB-55SD |
Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes 256K X 16 FLASH 5V PROM, 120 ns, PDSO48 Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:55ns; Series:AM29 RoHS Compliant: Yes 256K X 16 FLASH 5V PROM, 55 ns, PDSO48 Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:44-SOIC; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:55ns; Series:AM29 RoHS Compliant: Yes 256K X 16 FLASH 5V PROM, 55 ns, PDSO44
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Spansion, Inc.
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NID5001NT4 NID5001N NID5001NT4G |
Self-protected SmartDiscrete, 42V clamp, Temp & Current Limit, ESD, DPAK Self-protected FET with Temperature and Current Limit
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ONSEMI[ON Semiconductor]
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X9315 X9315WSZ-2.7 X9315TM X9315TM-2.7 X9315TMI X9 |
:SEMITOP 3; Centres, fixing:52.5mm; Current, Ic av:40A; Current, Ic continuous b max:32A; RoHS Compliant: Yes max:2.1V; Case style:SEMITOP 4; Current, Icm pulsed:100A; Temperature, Tj RoHS Compliant: Yes THYRISTOR MODULE, 3 PHASETHYRISTOR MODULE, 3 PHASE; Voltage, Vrrm:1600V; Case style:SEMITOP 3; Current, It rms:68A; Current, Itsm:450A; Voltage, Vgt :SEMITOP-4; Voltage, Vceo:1200V; Voltage, Vce sat max:2.15V; Current, Ic continuous a continuous a max:17A; Voltage, Vce sat max:2.5V; Case style:SEMITOP 3; Current, Icm RoHS Compliant: Yes IGBT MODULE, H BRIDGE 1200VIGBT MODULE, H BRIDGE 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3.2V IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:54A IGBT MODULE, CHOPPER 1200VIGBT MODULE, CHOPPER 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V IGBT MODULE 6 PACK 114A 1200V TRENCHIGBT MODULE 6 PACK 114A 1200V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Voltage :SEMITOP 2; Centres, fixing:38mm; Current, Ic av:23A; Current, Ic continuous b max:15A; RoHS Compliant: Yes IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 3; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V IGBT MODULE, DUAL 1200VIGBT MODULE, DUAL 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V; Current, Ic MOSFET MODULE, 6 PACK 75VMOSFET MODULE, 6 PACK 75V; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:100V; Case style:SEMITOP 2 RECTIFIER SCHOTTKY SINGLE 1A 70V 25A-ifsm 0.8V-vf 0.5mA-ir DO-41 5K/AMMO DIODE SCHOTTKY SINGLE 10V 150mW 0.37V-vf 30mA-IFM 1mA-IF 1uA-IR SOT-523 3K/REEL IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 1; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:30A; Current, Icm pulsed:24A; Power, Pd:1400W; Time, rise:35ns; Centres, fixing:28.5mm; Low Noise, Low Power, 32 Taps 10K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 32 POSITIONS, PDIP8 IGBT MODULE 6 PACK 96A 600V TRENCHIGBT MODULE 6 PACK 96A 600V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Current, Ic continuous a max:100A IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V; Current, Ic continuous a max:22A; Current, Icm pulsed:44A; Power, Pd:1600W; Time,
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http:// INTERSIL[Intersil Corporation] Intersil, Corp.
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LA-A2 LA000A2B LA000A2CB LA000A2U LAD66A2B LAD66A2 |
METAL CASE, CASE-MOUNTED SEMICONDUCTORS
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CTS Corporation ETC
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LB66B2 LB66B2-67B LB66B2-67CB LB66B2-67U LB66B2-76 |
METAL CASE, CASE-MOUNTED SEMICONDUCTORS
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http:// CTS Corporation
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